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Vortex shedding frequency in open-channel lateral cavity
- C. Perrot-Minot, E. Mignot, R. Perkins, D. Lopez, N. Riviere
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- Journal:
- Journal of Fluid Mechanics / Volume 892 / 10 June 2020
- Published online by Cambridge University Press:
- 06 April 2020, A25
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This article aims at predicting the oscillation frequency of open-channel lateral cavities, which are common sheltered zones of riverine environments, and have important ecological impact. Using a theoretical analysis based on an existing model for acoustic cavities and a free-surface lateral cavity experiment, we show that the vortex shedding in the mixing layer between the cavity and the open channel is always constrained by gravity waves even for low Froude numbers ($F<0.6$). This expands previous results from the literature showing the impact of gravity waves on the vortex shedding frequency for high Froude number ($F>0.6$). Measurements of the free-surface oscillation and transverse velocity oscillation frequencies reveal a unique frequency along the mixing layer, equal to the free-surface oscillation frequency anywhere in the cavity. Hence, it is shown that the vortex shedding frequency in an open-channel lateral cavity always equals a match between a natural frequency of the cavity and a solution of the feedback model developed herein for low to moderate Froude numbers.
Food insecurity, social networks and symptoms of depression among men and women in rural Uganda: a cross-sectional, population-based study
- Jessica M Perkins, Viola N Nyakato, Bernard Kakuhikire, Alexander C Tsai, SV Subramanian, David R Bangsberg, Nicholas A Christakis
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- Journal:
- Public Health Nutrition / Volume 21 / Issue 5 / April 2018
- Published online by Cambridge University Press:
- 09 October 2017, pp. 838-848
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Objective
To assess the association between food insecurity and depression symptom severity stratified by sex, and test for evidence of effect modification by social network characteristics.
DesignA population-based cross-sectional study. The nine-item Household Food Insecurity Access Scale captured food insecurity. Five name generator questions elicited network ties. A sixteen-item version of the Hopkins Symptom Checklist for Depression captured depression symptom severity. Linear regression was used to estimate the association between food insecurity and depression symptom severity while adjusting for potential confounders and to test for potential network moderators.
SettingIn-home survey interviews in south-western Uganda.
SubjectsAll adult residents across eight rural villages; 96 % response rate (n 1669).
ResultsSevere food insecurity was associated with greater depression symptom severity (b=0·4, 95 % CI 0·3, 0·5, P<0·001 for women; b=0·3, 95 % CI 0·2, 0·4, P<0·001 for men). There was no evidence of effect modification by social network factors for women. However, for men who are highly embedded within in their village social network, and (separately) for men who have few poor contacts in their personal network, the relationship between severe food insecurity and depression symptoms was stronger than for men on the periphery of their village social network, and for men with many poor personal network contacts, respectively.
ConclusionsIn this population-based study from rural Uganda, food insecurity was associated with mental health for both men and women. Future research is needed on networks and food insecurity-related shame in relation to depression symptoms among food-insecure men.
An experimental investigation of the laminar horseshoe vortex around an emerging obstacle
- Gaby Launay, E. Mignot, N. Riviere, R. Perkins
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- Journal:
- Journal of Fluid Mechanics / Volume 830 / 10 November 2017
- Published online by Cambridge University Press:
- 29 September 2017, pp. 257-299
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An emerging long obstacle placed in a boundary layer developing under a free surface generates a complex horseshoe vortex (HSV) system, which is composed of a set of vortices exhibiting a rich variety of dynamics. The present experimental study examines such flow structure and characterizes precisely, using particle image velocimetry (PIV) measurements, the evolution of the HSV geometrical and dynamical properties over a wide range of dimensionless parameters (Reynolds number $Re_{h}\in [750,8300]$ , boundary layer development ratio $h/\unicode[STIX]{x1D6FF}\in [1.25,4.25]$ and obstacle aspect ratio $W/h\in [0.67,2.33]$ ). The dynamical study of the HSV is based on the categorization of the motions of HSV vortices that result in an enhanced specific bi-dimensional typology, separating a coherent (due to vortex–vortex interactions) and an irregular evolution (due to the appearance of small-scale instabilities). This precise categorization is made possible thanks to the use of vortex tracking methods applied to PIV measurements; a semi-empirical model for the motion of the HSV vortices is then proposed to highlight some important mechanisms of the HSV dynamics, such as (i) the influence of the surrounding vortices on vortex motion and (ii) the presence of a phase shift between the motion of all vortices. Finally, the study of the HSV’s geometrical properties (vortex position and characteristic lengths and frequencies) evolution with the flow parameters shows that strong dependencies exist between the streamwise extension of the HSV and the obstacle width, and between the HSV vortex number and its elongation. Comparison of these data with prior studies for immersed obstacles reveals that emerging obstacles lead to greater adverse pressure gradients and down-flows in front of the obstacle. This implies a precocious separation of the boundary layer, leading to a larger HSV streamwise extension, and a lower vertical extension of the HSV, leading to smaller HSV vortices.
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. 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Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- Book:
- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Carriage of Neisseria meningitidis: investigations in a military establishment
- J. V. S. Pether, N. F. Lightfoot, R. J. D. Scott, J. Morgan, A. P. Steele-Perkins, S. C. Sheard
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- Epidemiology & Infection / Volume 101 / Issue 1 / August 1988
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- 15 May 2009, pp. 21-42
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A prevalence study of personnel on a Royal Naval Air Station revealed that 23·0% of 2479 personnel were carrying a meningococcus. Selected groups of personnel were subsequently swabbed monthly for a year. We have shown that it is only by repeated swabbing and the use of optimal methods including enrichment media that one can have a hope of identifying the ‘true’ carriage rate. A presumed virulent strain of Neisseria meningitidis B 15 P1·16 was repeatedly isolated from three personnel who remained well, as did their colleagues both at their work place and socially. The study served to emphasize our lack of knowledge of the virulence factors associated with N. meningitidis.
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- By Nalini Vadivelu, Christian J. Whitney, Raymond S. Sinatra, M. Khurram Ghori, Yu-Fan (Robert) Zhang, Raymond S. Sinatra, Joshua Wellington, Yuan-Yi Chia, Francis J. Keefe, Jon McCormack, Ian Power, John Butterworth, P. M. Lavand’homme, M. F. De Kock, Bradley Urie, Oscar A. de Leon-Casasola, Frederick M. Perkins, Larry F. Chu, David Clark, Martin S. Angst, Cynthia M. Welchek, Lisa Mastrangelo, Raymond S. Sinatra, Richard Martinez, Scott S. Reuben, Asokumar Buvanendran, Raymond S. Sinatra, Pamela E Macintyre, Julia Coldrey, Daniel B. Maalouf, Spencer S. Liu, Susan Dabu-Bondoc, Samantha A. Franco, Raymond S. Sinatra, James Benonis, Jennifer Fortney, David Hardman, Gavin Martin, Holly Evans, Karen C. Nielsen, Marcy S. Tucker, Stephen M. Klein, Benjamin Sherman, Ikay Enu, Raymond S. Sinatra, James W. Heitz, Eugene R. Viscusi, Jonathan S. Jahr, Kofi N. Donkor, Raymond S. Sinatra, Manzo Suzuki, Johan Raeder, Vegard Dahl, Stefan Erceg, Keun Sam Chung, Kok-Yuen Ho, Tong J. Gan, Dermot R. Fitzgibbon, Paul Willoughby, Brian E. Harrington, Joseph Marino, Tariq M. Malik, Raymond S. Sinatra, Giorgio Ivani, Valeria Mossetti, Simona Italiano, Thomas M. Halaszynski, Nousheh Saidi, Javier Lopez, Kate Miller, Ferne Braveman, Jaya L. Varadarajan, Steven J. Weisman, Sukanya Mitra, Raymond S. Sinatra, Theodore J. Saclarides, Knox H. Todd, James R. Miner, Chris Pasero, Nancy Eksterowicz, Margo McCaffery, Leslie N. Schechter, Amr E. Abouleish, Govindaraj Ranganathan, Tee Yong Tan, Stephan A. Schug, Marie N. Hanna, Spencer S. Liu, Christopher L. Wu, Craig T. Hartrick, Garen Manvelian, Christine Miaskowski, Brian Durkin, Peter S. A. Glass
- Edited by Raymond S. Sinatra, Oscar A. de Leon-Cassasola, University of Rochester Medical Center, New York, Eugene R. Viscusi, Brian Ginsberg
- Foreword by Henry McQuay
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- Acute Pain Management
- Published online:
- 26 October 2009
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- 27 April 2009, pp vii-xii
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Kinematic simulation of homogeneous turbulence by unsteady random Fourier modes
- J. C. H. Fung, J. C. R. Hunt, N. A. Malik, R. J. Perkins
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- Journal of Fluid Mechanics / Volume 236 / March 1992
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- 26 April 2006, pp. 281-318
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The velocity field of homogeneous isotropic turbulence is simulated by a large number (38–1200) of random Fourier modes varying in space and time over a large number (> 100) of realizations. They are chosen so that the flow field has certain properties, namely (i) it satisfies continuity, (ii) the two-point Eulerian spatial spectra have a known form (e.g. the Kolmogorov inertial subrange), (iii) the time dependence is modelled by dividing the turbulence into large- and small-scales eddies, and by assuming that the large eddies advect the small eddies which also decorrelate as they are advected, (iv) the amplitudes of the large- and small-scale Fourier modes are each statistically independent and each Gaussian. The structure of the velocity field is found to be similar to that computed by direct numerical simulation with the same spectrum, although this simulation underestimates the lengths of tubes of intense vorticity.
Some new results and concepts have been obtained using this kinematic simulation: (a) for the inertial subrange (which cannot yet be simulated by other means) the simulation confirms the form of the Eulerian frequency spectrum $\phi^{\rm E}_{11} = C^{\rm E}\epsilon^{\frac{2}{3}}U^{\frac{2}{3}}_0\omega^{-\frac{5}{3}}$, where ε,U0,ω are the rate of energy dissipation per unit mass, large-scale r.m.s. velocity, and frequency. For isotropic Gaussian large-scale turbulence at very high Reynolds number, CE ≈ 0.78, which is close to the computed value of 0.82; (b) for an observer moving with the large eddies the ‘Eulerian—Lagrangian’ spectrum is ϕEL11 = CELεω−2, where CEL ≈ 0.73; (c) for an observer moving with a fluid particle the Lagrangian spectrum ϕL11 = CLεω−2, where CL ≈ 0.8, a value consistent with the atmospheric turbulence measurements by Hanna (1981) and approximately equal to CEL; (d) the mean-square relative displacement of a pair of particles 〈Δ2〉 tends to the Richardson (1926) and Obukhov (1941) form 〈Δ2〉 = GΔεt3, provided that the subrange extends over four decades in energy, and a suitable origin is chosen for the time t. The constant GΔ is computed and is equal to 0.1 (which is close to Tatarski's 1960 estimate of 0.06); (e) difference statistics (i.e. displacement from the initial trajectory) of single particles are also calculated. The exact result that Y2 = GYεt3 with GY = 2πCL is approximately confirmed (although it requires an even larger inertial subrange than that for 〈Δ2〉). It is found that the ratio [Rscr ]G = 2〈Y2〉/〈Δ2〉≈ 100, whereas in previous estimates [Rscr ]G≈ 1, because for much of the time pairs of particles move together around vortical regions and only separate for the proportion of the time (of O(fc)) they spend in straining regions where streamlines diverge. It is estimated that [Rscr ]G ≈ O(fc−3). Thus relative diffusion is both a ‘structural’ (or ‘topological’) process as well as an intermittent inverse cascade process determined by increasing eddy scales as the particles separate; (f) statistics of large-scale turbulence are also computed, including the Lagrangian timescale, the pressure spectra and correlations, and these agree with predictions of Batchelor (1951), Hinzc (1975) and George et al. (1984).
Progression to AIDS, a clinical AIDS condition and mortality: psychosocial and physiological predictors
- J. LESERMAN, J. M. PETITTO, H. GU, B. N. GAYNES, J. BARROSO, R. N. GOLDEN, D. O. PERKINS, J. D. FOLDS, D. L. EVANS
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- Journal:
- Psychological Medicine / Volume 32 / Issue 6 / August 2002
- Published online by Cambridge University Press:
- 26 September 2002, pp. 1059-1073
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Background. The primary aim of this study is to examine prospectively the association of stressful life events, social support, depressive symptoms, anger, serum cortisol and lymphocyte subsets with changes in multiple measures of human immunodeficiency virus (HIV) disease progression.
Methods. Ninety-six HIV-infected gay men without symptoms or anti-retroviral medication use at baseline were studied every 6 months for up to 9 years. Disease progression was defined in three ways using the Centers for Disease Control (CDC) classifications (e.g. AIDS, clinical AIDS condition and mortality). Cox regression models with time-dependent covariates were used, adjusting for control variables (e.g. race, age, baseline, CD4 T cells and viral load, number of anti-retroviral medications).
Results. Higher cumulative average stressful life events and lower cumulative average social support predicted faster progression to both the CDC AIDS classification and a clinical AIDS condition. Higher anger scores and CD8 T cells were associated with faster progression to AIDS, and depressive symptoms were associated with faster development of an AIDS clinical condition. Higher levels of serum cortisol predicted all three measures of disease progression.
Conclusions. These results suggest that stressful life events, dysphoric mood and limited social support are associated with more rapid clinical progression in HIV infection, with serum cortisol also exerting an independent effect on disease progression.
Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy
- Eric Rehder, M. Zhou, L. Zhang, N. R. Perkins, S. E. Babcock, T. F. Kuech
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 322-326
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- 1999
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The surface morphology and structure of AlN deposited by metal organic vapor phase epitaxy (MOVPE) on Si (111) at growth temperatures ranging from 825 to 1175°C was investigated. Transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS) techniques were used to study the resulting film structure. Growth at high temperatures but less than ∼1100°C, resulted in a wire texture with some degree of in-plane alignment with (0001)AlN/ /(111)Si, < 10 0>AlN//< 11>Si, and 110>AlN//<10>Si. Deposition at temperatures greater than 1100°C results in single crystal films consisting of domains 60 nm across with an aspect ratio near unity. Growth below1100°C leads to degraded crystal quality with the grains developing random rotational misalignments around the AlN [0001] axis. Growth at lower temperatures produces islands elongated along the [110] direction. At the growth temperature of 825°C, the aspect ratio of the islands increased to 3 and a width of 25 nm. Cross-sectional TEM reveals that these islands are faceted due to slow growth on the {1 01}planes.
Influence of C, N and O Ion-Implantation on Yellow Luminescence
- R. Zhang, L. Zhang, N. Perkins, T. F. Kuech
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 321
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- 1998
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Influence of C, N and O ion-implantation on the yellow luminescence (YL) of halide vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE) grown GaN has been studied by photoluminescence (PL) spectroscopy. For the HVPE-grown samples, only C implantation produces a significant enhancement of YL while its corresponding overall PL integrated intensity is only ˜72% of its original value. Implantation of O or N do not appreciably change the YL but decrease the BE integrated intensities by a factor of ten. The full-width-halfmaximum (FWHM) of the BE band expanded to about 1.4 × of the original value in all three cases. These results indicate that one source of the YL is strongly correlated to incorporation of C into the GaN film. The C-induced defect complexes in GaN are optically active while O or N does not lead to any new luminescence features. The variable-temperature PL measurements on the C-implanted HVPE-grown GaN reveal that the FWHM of the YL band increases linearly and the peak energy of the YL changes very little with the increasing measurement temperature, while the integrated intensity of the YL band decreases monotonically. This trend of the YL FWHM and peak energy with the measurement temperature can be explained by a two-channel transition model. For MOVPE-grown GaN films., all ion-implanted samples exhibit a significant loss of both the YL and overall integrated PL intensity. Residual C contamination in the MOVPE samples could be large compared to the additional ion-implanted carbon leading to a reduced impact of the ion-implanted carbon.
Structure of Ain on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy
- Eric Rehder, M. Zhou, L. Zhang, N. R. Perkins, S. E. Babcock, T. F. Kuech
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.56
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- 1998
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The surface morphology and structure of AIN deposited by metal organic vapor phase epitaxy (MOVPE) on Si (111) at growth temperatures ranging from 825 to 1175°C was investigated. Transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS) techniques were used to study the resulting film structure. Growth at high temperatures but less than ∼1100°C, resulted in a wire texture with some degree of in-plane alignment with (0001)AIN //(111)si, <1010>AIN //<211>si, and <1120>AIN. // <110>si. Deposition at temperatures greater than 1100°C results in single crystal films consisting of domains 60 nm across with an aspect ratio near unity. Growth below 1100°C leads to degraded crystal quality with the grains developing random rotational misalignments around the AIN [0001] axis. Growth at lower temperatures produces islands elongated along the [1120] direction. At the growth temperature of 825°C, the aspect ratio of the islands increased to 3 and a width of 25 nm. Cross -sectional TEM reveals that these islands are faceted due to slow growth on the {1101} planes.
The Effect of Growth Temperature On The Microstructure of Movpe AlN/Si (111)
- Mei Zhou, N. R. Perkins, E. Rehder, T. F. Kuech, S. E. Babcock
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 185
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- 1997
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The epitaxy, defect structure, and heterointerface microstructure of MOVPE-grown AlN on <111> oriented Si were studied by transmission electron microscopy (TEM) in an investigation of the affects of the growth temperature (925°C–1 175°C) on the microstructure of low thickness (∼0.2 μm) films. A film grown at 1175°C was single crystalline with the following orientation relationship: (0001)AlN||(111)Si, <1120> and <1010>AlN||<211> Si. All AlN films grown at temperatures below 1100°C were wire-textured polycrystals with (0001)AlN largely parallel to (111)si and some in-plane preferred orientation similar to that of 1175°C AlN epifilms. Columnar grains/domains with faceted top surfaces were observed for the entire growth temperature range. The mean column diameters decreased from 50 nm to 35 nm as the growth temperature decreased. The columnar grain/domain structure and the faceted tops resulted in peakto-valley surface roughness on the order of 20 nm. Sharp interfaces of AlN/Si were generally observed in all AIN films studied by HREM except for the 1075°C film where a transitional layer of approximately 15Å thick was observed at some interface regions. Defects typically encountered in large lattice mismatched heteroepitaxial systems were observed.
High Resolution X-Ray Diffraction Analysis Of Gallium Nitride Grown On Sapphire By Halide Vapor Phase Epitaxy
- R. J. Matyi, D. Zhi, N. R. Perkins, M. N. Horton, T. F. Kuech
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 239
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- 1996
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We report a structural analysis of GaN layers with thicknesses ranging from 10 μm to 250 μm which have been grown on sapphire substrates by halide vapor phase epitaxy (HVPE). The effect of growth rate during HVPE growth has also been examined. The growth was performed using GaCl and ammonia as reactants; growth rates in excess of 90 μm/hr have been achieved. The structural characteristics of these layers have been performed wit'i high resolution x-ray diffractometry. Longitudinal scans parallel to the GaN [0002] direction, transverse scans perpendicular to the [0002], and reciprocal space maps of the total diffracted intensity have been obtained from a variety of GaN layers. The transverse scans typically show broad rocking curves with peak breadths of several hundreds of arcseconds. In contrast, the longitudinal scans (or “θ/2θ scans”) which are sensitive only to strains in the GaN layers (and not their mosaic distributions) showed peak widths that were at least an order of magnitude smaller and in some cases were as narrow as 16 arcseconds. These results suggest that the defect structure of the GaN layers grown by HVPE is dominated by a dislocation-induced mosaic distribution, with the effects of strain in these materials being negligible in comparison.
Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy
- S. A. Safvi, N. R. Perkins, M. N. Horton, T. F. Kuech
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 289
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- 1996
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The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated in a horizontal Gallium Nitride vapor phase epitaxy reactor. To better understand the effects of these parameters, numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and may be responsible for inferior crystal quality. A low ammonia concentration is correlated with the deposition of polycrystalline films. A low V/III ratio and an ammonia concentration lead to poor crystalline quality and increased yellow luminescence. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize these parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.
Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters
- N. V. Edwards, S. D. Yoo, M. D. Bremser, M. N. Horton, N. R. Perkins, T. W. Weeks, Jr., H. Liu, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 781
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- 1996
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We provide the widest estimate thus far of the range of tensile and compressive stress (−3.8 to 3.5 kbar) that GaN epitaxial material can withstand before relaxation occurs, and an unambiguous determination of the spin-orbit splitting Δso = 17.0 ± 1 meV for the material. These are achieved by analyzing 10K reflectance data for the energy separation of transitions between the uppermost valence bands and the lowest conduction band of wurtzitic GaN as a function of biaxial stress for a series of GaN films grown on both Al2O3 and 6H-SiC substrates. Our data explicitly show the nonlinear behavior of the excitonic energy splittings B-A and C-A vs. the energy position of the A exciton, which stands in contrast to the linear approximations used by previous workers analyzing material grown only on Al2O3 substrates. Further, the lineshape ambiguities present in GaN reflectance spectra that hindered the accurate determination of such excitonic energies have also been resolved by analyzing these data in reciprocal space, where critical point energies are determined by phase effects to an accuracy of ±0.5 meV.
PtIn2 ohmic contacts to n-GaN
- D. B. Ingerly, Y. A. Chang, N. R. Perkins, T. F. Kuech
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1103
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- 1996
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A new metallization scheme has been developed to form ohmic contacts to n-GaN. Contacts were fabricated by sputtering the intermetallic compound, PtIn2 on n-GaN (n ∼ 5 ×l017 cm−3) grown by metalorganic vapor phase epitaxy (MOVPE) with some of the contacts subjected to rapid thermal annealing. Contacts in the as-deposited state exhibited nearly ohmic behavior with a specific contact resistance of 1.2 × 10−2 Ω cm2. Contacts subjected to rapid thermal annealing at 800 °C for 1 minute exhibited linear current-voltage characteristics and a decrease in contact resistance. To rationalize the reaction at the contact interface the phase diagram of the PtIn2-PtGa2-InN-GaN reciprocal system at 800 °C was calculated based on known and estimated thermodynamic values. This phase diagram suggests that there will be a solid state exchange of In and Ga atoms at the Ptln2/GaN contact interface producing (InxGa1-x)N and Pt(In,Ga)2. Results from Auger depth profiling used to examine the Ptln2/n-GaN contacts are consistent with this estimated phase diagram information. It is proposed that the formation of (InxGa1-x)N at the contact interface is responsible for the ohmic behavior of Ptln2 contacts.
Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers
- N. R. Perkins, M. N. Horton, D. Zhi, R. J. Matyi, Z. Z. Bandic, T. C. McGill, T. F. Kuecht
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 287
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- 1996
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We have investigated the nucleation and growth of gallium nitride (GaN) films on silicon and sapphire substrates using halide vapor phase epitaxy (HVPE). GaN growth was carried out on bare Si and sapphire surfaces, as well as on MOVPE-grown GaN buffer layers. HVPE growth on MOVPE GaN/AlN buffer layers results in lower defect densities as determined by x-ray than growth directly on sapphire. HVPE GaN films grown directly on sapphire exhibit strong near-edge photoluminescence, a pronounced lack of deep level-based luminescence, and x-ray FWHM values of 16 arcsec by an x-ray θ-2θ scan. The crystallinity of GaN films on sapphire is dominated by the presence of rotational misorientation domains, as measured by xray ω-scan diffractometry, which tend to decrease with increasing thickness or with the use of a homoepitaxial MOVPE buffer layer. The effect of increasing film thickness on the defect density of the epilayer was studied. In contrast, the HVPE growth of nitride films directly on silicon is complicated by mechanisms involving the formation of silicon nitrides and oxides at the initial growth front.
Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy
- S. A. Safvi, N. R. Perkins, M. N. Horton, A. Thon, D. Zhi, T. F. Kuech
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 227
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- 1996
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A numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.
MOVPE Growth and Doping of ZnTe Using Tertiarybutylphosphine as the Metalorganic Doping Precursor
- N. R. Perkins, David F. Dawson-Elli, T.F. Kuech
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- Journal:
- MRS Online Proceedings Library Archive / Volume 340 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 469
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- 1994
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ZnTe has gained attention as a promising material for short wavelength optoelectronic applications. Unlike ZnSe, ZnTe can be doped p-type but not n-type. There are few reports detailing the growth and doping of ZnTe films through the MOVPE technique. We present growth and doping studies for ZnTe formed through low pressure MOVPE. Dimethylzinctriethylamine and diisopropyltelluride were chosen as the metalorganic precursors. Growth studies were carried out on both GaAs (100) and GaSb (100) substrates. Growth morphology was very sensitive to both the lattice mismatch and the initial surface preparation. This is particularly evident on the GaSb substrates. ZnTe growth temperatures ranged from 340 to 420°C, and growth rates of up to 1 μm/hour were achieved. ZnTe was found to be readily doped using tertiarybutylphosphine, with p-type concentrations ranging from 4×1016 cm−3 to 2x1019 cm−3, and corresponding room temperature hole mobilities between 55 and 12 cm2/V-sec. Tertiarybutylphosphine was also observed to significantly improve the surface morphology for growths on GaSb substrates.
An open letter to the President
- Louis Appleby, Glyn Lewis, R. H. Cawley, Isaac Marks, Pamela Taylor, Raymond Levy, Klaus Bergmann, Nick Temple, Brian Toone, Stephen Wolkind, Eileen Joyce, Michael Gill, E. Guinness, Michael Farrell, V. L. Nimgaonkar, Deborah Chee, L. Mynors-Wallis, Peter Jones, Penny Thompson, Rachel Brown, H. Ring, Claire Gerada, Jenny Bearn, S. G. Potts, B. C. Beats, Lyn Pilowsky, Judith Jackson, G. F. Searle, Keith Lloyd, Helena Fox, Parimela Moodley, Tony Maden, S. W. Lewis, M. W. Orrell, D. Murphy, W. J. Levy, Brian Green, Alex Buchanan, Marian J. Perkins, Peter Misch, Gillian Mezey, M. Murphy, Anthony David, Robert Kerwin, Shirine Pezeshgi, M. Abas, P. Silverstone, J. H. Stone, G. O. 'Sullivan, R. Araya, R. Ball, E. Palazidou, Jane Milton, Anthony J. Pelosi, Janet Carrick, Dinesh Bhugra, Chris Hollis, Mark Berelowitz, N. R. Fisher, Deborah Brooke, Charles Hindler, Malcolm Battersby, Abigail Seltzer
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- Journal:
- Psychiatric Bulletin / Volume 12 / Issue 12 / December 1988
- Published online by Cambridge University Press:
- 02 January 2018, p. 554
- Print publication:
- December 1988
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